The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Aug. 04, 2022
Applicant:
Ememory Technology Inc., Hsin-Chu, TW;
Inventors:
Tsung-Mu Lai, Hsinchu County, TW;
Meng-Chiuan Wu, Hsinchu County, TW;
Wei-Chen Chang, Hsinchu County, TW;
I-Lang Lin, Hsinchu County, TW;
Assignee:
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 7/24 (2006.01); G11C 13/00 (2006.01); H01L 23/525 (2006.01); H10B 20/20 (2023.01);
U.S. Cl.
CPC ...
H10B 20/20 (2023.02); G11C 7/24 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1677 (2013.01); G11C 13/003 (2013.01); G11C 13/0038 (2013.01); G11C 13/004 (2013.01); G11C 13/0064 (2013.01); H01L 23/5256 (2013.01); G11C 2013/0045 (2013.01); G11C 2213/79 (2013.01);
Abstract
A forming control method for a resistive random-access memory cell array is provided. While a forming action of the resistive random-access memory cell array is performed, a verification action is performed to judge whether the forming action on the resistive random-access memory cells has been successfully done. By properly changing a forming voltage or a pulse width, the forming actions on all of the resistive random-access memory cells of the resistive random-access memory cell array can be successfully done.