The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jul. 07, 2023
Ememory Technology Inc., Hsin-Chu, TW;
Lun-Chun Chen, Hsinchu County, TW;
Ping-Lung Ho, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
An antifuse-type OTP memory cell at least includes a first nanowire, a second nanowire, a first gate structure, a first drain/source structure and a second drain/source structure. The first gate structure includes a first gate dielectric layer, a second gate dielectric layer and a first gate layer. The first nanowire is surrounded by the first gate dielectric layer. The second nanowire is surrounded by the second gate dielectric layer. The first gate dielectric layer and the second gate dielectric layer are surrounded by the first gate layer. The first drain/source structure is electrically contacted with a first terminal of the first nanowire and a first terminal of the second nanowire. The second drain/source structure is electrically contacted with a second terminal of the first nanowire. The second drain/source structure is not electrically contacted with a second terminal of the second nanowire.