Erasable programmable non-volatile memory cell

Abstract

An erasable programmable non-volatile memory cell includes an isolation structure, a first P-well region, a second P-well region, an N-type isolation region, a first gate structure, a second gate structure, a first merged doped region, a second merged doped region, a third merged doped region and a fourth merged doped region. The isolation structure is formed on a P-type semiconductor substrate. The first gate structure and the second gate structure are formed on the surface of the P-type semiconductor substrate corresponding to the first region. An area the P-type semiconductor substrate corresponding to the first region are divided into a first merged doped region, a second merged doped region and a third merged doped region. The fourth merged doped region is formed in the P-type semiconductor substrate corresponding to the second region.