The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Jul. 07, 2021
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yi-Ting Wu, Tainan, TW;

Cheng-Tung Huang, Kaohsiung, TW;

Jen-Yu Wang, Tainan, TW;

Yung-Ching Hsieh, Tainan, TW;

Po-Chun Yang, Tainan, TW;

Jian-Jhong Chen, Tainan, TW;

Bo-Chang Li, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10N 50/80 (2023.02);
Abstract

A MRAM circuit structure is provided in the present invention, with the unit cell composed of three transistors in series and four MTJs, wherein the junction between first transistor and third transistor is first node, the junction between second transistor and third transistor is second node, and the other ends of first transistor and third transistor are connected to a common source line. First MTJ is connected to second MTJ in series to form a first MTJ pair that connecting to the first node, and third MTJ is connected to fourth MTJ in series to form a second MTJ pair that connecting to the second node.


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