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For the Inventor, By the Inventor

Tainan, Taiwan

Jen-Yu Wang

This inventor holds 19 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Magnetic Memory Technology. Top assignee: United Microelectronics Corp.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jen-Yu Wang. Retrieved from https://idiyas.com/inventor/jen-yu-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 100.0


Average Co-Inventor Count = 6.2

ph-index = 3

Forward Citations = 50(Granted Patents)


Company Filing History:

goldMedal19 out of 7,294 
 
United Microelectronics Corp.
 patents

Years Active: 2016-2025

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Areas of Expertise:
Spin-Orbit Torque
Magnetic Random Access Memory
MRAM Circuit
Temperature Compensation
Magnetoresistive
Semiconductor Device
FinFET CMOS
Non-Volatile Cells
Transistor Manufacturing
Epitaxial Layer
Bit Line
Source Line
19 patents (USPTO):Explore Patents
1. 12340830 - Spin-orbit torque magnetic random access memory circuit and layout thereof (2025-06-24),
2. 12178052 - MRAM circuit structure and layout structure (2024-12-24),
3. 11955154 - Sense amplifier circuit with temperature compensation (2024-04-09),
4. 11942130 - Bottom-pinned spin-orbit torque magnetic random access memory and method of manufacturing the same (2024-03-26),
5. 11903325 - Magnetic memory device having shared source line and bit line (2024-02-13),
6. 11699705 - Semiconductor device (2023-07-11),
7. 11637103 - Semiconductor device (2023-04-25),
8. 11355695 - Magnetic memory device having shared source line and bit line (2022-06-07),
9. 11238912 - Magnetoresistive random-access memory (2022-02-01),
10. 11171137 - Method of making FinFET CMOS device including single diffusion break in each of NMOS and PMOS regions (2021-11-09),
11. 11018185 - Layout pattern for magnetoresistive random access memory (2021-05-25),
12. 10978122 - Memory including non-volatile cells and current driving circuit (2021-04-13),
13. 10651235 - 2-transistor 2-magnetic tunnel junction (2T2MTJ) MRAM structure (2020-05-12),
14. 10483264 - FinFET CMOS device including single diffusion break in each of NMOS and PMOS regions (2019-11-19),
15. 10056463 - Transistor and manufacturing method thereof (2018-08-21),

Title: The Innovative Journey of Inventor Jen-Yu Wang

Introduction: Jen-Yu Wang, a distinguished inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Wang's latest patents include advancements in renewable energy technologies, smart home devices, and artificial intelligence systems, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Jen-Yu Wang has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing solutions that push the boundaries of what is possible. His work has been recognized globally for its impact and ingenuity.

Collaborations: Wang has collaborated with leading tech companies, research institutions, and universities to further his research and bring his inventions to life. His ability to work across disciplines and with diverse teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Jen-Yu Wang's passion for innovation, coupled with his dedication to creating a better future through technology, has solidified his reputation as a pioneering inventor in the world of patents and inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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