The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jul. 27, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Yen-Wei Tung, Tainan, TW;
Jen-Yu Wang, Tainan, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Yan-Jou Chen, Yunlin County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile