The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jan. 20, 2020
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yi-Ting Wu, Tainan, TW;
Jian-Jhong Chen, Tainan, TW;
Po-Chun Yang, Tainan, TW;
Jhen-Siang Wu, Kaohsiung, TW;
Yung-Ching Hsieh, Tainan, TW;
Bo-Chang Li, Tainan, TW;
Jen-Yu Wang, Tainan, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract
A layout pattern for magnetoresistive random access memory (MRAM) includes a first magnetic tunneling junction (MTJ) pattern on a substrate, a second MTJ pattern adjacent to the first MTJ pattern, and a third MTJ pattern between the first MTJ pattern and the second MTJ pattern. Preferably, the first MTJ pattern, the second MTJ pattern, and the third MTJ pattern constitute a staggered arrangement.