The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Mar. 08, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Yi-Ting Wu, Tainan, TW;
Jhen-Siang Wu, Kaohsiung, TW;
Po-Chun Yang, Tainan, TW;
Yung-Ching Hsieh, Tainan, TW;
Zong-Sheng Zheng, Tainan, TW;
Jian-Jhong Chen, Tainan, TW;
Jen-Yu Wang, Tainan, TW;
Cheng-Tung Huang, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A first MRAM set includes a first transistor and a second transistor. The first transistor includes a first gate structure, a first source/drain doping region and a first common source/drain doping region. The second transistor includes a second gate structure, a second source/drain doping region and the first common source/drain doping region. A second MTJ is disposed on the second transistor. The first common source/drain doping region electrically connects to the second MTJ. A first MTJ is disposed on the first transistor. The sizes of the first MTJ and the second MTJ are different. The second MTJ connects to the first MTJ in series. A bit line electrically connects the first MTJ. A source line electrically connects to the first source/drain doping region and the second source/drain doping region.