The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Apr. 06, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Tien-Yu Lu, Taichung, TW;
Chang-Hung Chen, Tainan, TW;
Chun-Hsien Huang, Tainan, TW;
Han-Tsun Wang, Tainan, TW;
Jheng-Tai Yan, Yunlin County, TW;
Yu-Tse Kuo, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A SRAM cell includes a first pass-gate device and a second-pass gate device comprising a first conductivity type, a first pull-down device and a second pull-down device comprising the first conductivity type, and a first pull-up device and a second pull-up device comprising a second conductivity type complementary to the first conductivity type. The first pass-gate device and the second pass-gate device respectively include first lightly-doped drains (hereinafter abbreviated as LDDs. The first pull-down device and the second pull-down device respectively include second LDDs. And a dosage of the first LDDs is different from a dosage of the second LDDs.