Jheng-Tai Yan

Title: Jheng-Tai Yan: Innovator in SRAM Technology

Introduction

Jheng-Tai Yan is a prominent inventor based in Yunlin County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of static random access memory (SRAM) cells. His innovative work has led to advancements that are crucial for modern electronic devices.

Latest Patents

Jheng-Tai Yan holds a patent for a "Static random access memory cell and manufacturing method thereof." This SRAM cell design includes a first pass-gate device and a second pass-gate device, both comprising a first conductivity type. Additionally, it features a first pull-down device and a second pull-down device, also of the first conductivity type, along with a first pull-up device and a second pull-up device of a second conductivity type that is complementary to the first. The design incorporates lightly-doped drains (LDDs) for both the pass-gate and pull-down devices, with differing dosages for optimal performance.

Career Highlights

Jheng-Tai Yan is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other talented professionals and contribute to cutting-edge technology in memory storage solutions.

Collaborations

Some of Jheng-Tai Yan's notable coworkers include Tien-Yu Lu and Chang-Hung Chen. Their collective expertise in semiconductor technology has fostered an environment of innovation and advancement within their projects.

Conclusion

Jheng-Tai Yan's contributions to SRAM technology exemplify the importance of innovation in the semiconductor industry. His patent and work at United Microelectronics Corporation highlight his role as a key player in advancing electronic memory solutions.