The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Nov. 23, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Shu-Wei Yeh, Tainan, TW;

Han-Tsun Wang, Tainan, TW;

Chang-Hung Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/412 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); G11C 11/412 (2013.01);
Abstract

The invention provides a layout pattern cell of a static random access memory (SRAM), which at least comprises a first SRAM cell, a plurality of gate structures spanning a plurality of fin structures, so as to form a first pull-up transistor, a second pull-up transistor, a first pull-down transistor, a second pull-down transistor, a first access transistor, a second access transistor, a third access transistor, a fourth access transistor, a first parasitic transistor and a second parasitic transistor located on a substrate, the first parasitic transistor and the first pull-down transistor span the same fin structure, and the fin structure spanned by the first parasitic transistor and the first pull-down transistor is a continuous structure.


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