The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Jul. 07, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Tien-Yu Lu, Taichung, TW;
Chang-Hung Chen, Tainan, TW;
Yu-Tse Kuo, Tainan, TW;
Chun-Hsien Huang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a layout pattern of an 8-transistor static random access memory (8T-SRAM), at least including a first diffusion region, a second diffusion region and a third diffusion region disposed on a substrate, a critical dimension region being disposed between the first diffusion region and the third diffusion region. The critical dimension region directly contacts the first diffusion region and the third diffusion region, a first extra diffusion region, a second extra diffusion region and a third extra diffusion region disposed surrounding and directly contacting the first diffusion region, the second diffusion region and the third diffusion region respectively. The first, the second and the third extra diffusion region are not disposed within the critical dimension region.