The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Feb. 01, 2021
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Wei-Chi Lee, Tainan, TW;

Shu-Wei Yeh, Taichung, TW;

Chang-Hung Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01);
Abstract

A layout pattern of static random access memory at least includes a substrate, a plurality of fin structures on the substrate, a plurality of gate structures on the substrate and spanning the fin structures to form a plurality of transistors distributed on the substrate, the plurality of transistors include, a first pull-up transistor PU, a first pull-down transistor PD, a second pull-up transistor PU, a second pull-down transistor PD, a first pass gate transistor PG, a second pass gate transistor PG, a first read transistor RPD and a second read transistor RPG, and an additional fin structure, the additional fin structure is located between the fin structure of the first pass gate transistor PGand the fin structure of the second read transistor RPG.


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