The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jun. 30, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Bau-Ming Wang, Hsinchu, TW;
Liang-Yin Chen, Hsinchu, TW;
Huicheng Chang, Hsinchu, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes: forming a first type well in a substrate; and after forming the first type well in the substrate, forming a second type well in the substrate, where the second type well has a conductivity type different from that of the first type well. One of the first and second type wells is formed by sequentially performing multiple ion implantations that use different energies, and one of the ion implantations that uses a lowest energy among the ion implantations is performed first among the ion implantations.