Cheng-Wei Lian

Title: Biography of Inventor Cheng-Wei Lian

Introduction: Cheng-Wei Lian is a prominent inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His innovative work focuses on methods for manufacturing advanced gate structures.

Latest Patents: Cheng-Wei Lian's latest patents include a method for manufacturing a gate structure with an additional oxide layer. This patent describes a process that involves forming a dummy gate structure over a substrate, creating a sealing layer around it, and subsequently forming a spacer. The method also details the removal of the dummy gate structure to create a trench, followed by the formation of an interfacial layer and a gate dielectric layer. Additionally, it includes the formation of a capping layer over the gate dielectric layer, which is partially oxidized to create a capping oxide layer. The final steps involve forming a work function metal layer and a gate electrode layer.

Career Highlights: Cheng-Wei Lian is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to advance semiconductor technologies. His expertise in manufacturing processes has positioned him as a key player in the industry.

Collaborations: Throughout his career, Cheng-Wei Lian has collaborated with notable colleagues, including Chih-Lin Wang and Kang-Min Kuo. These partnerships have fostered innovation and contributed to the development of cutting-edge