The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Apr. 17, 2015
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Chih-Wei Lin, Taichung, TW;
Chih-Lin Wang, Zhubei, TW;
Kang-Min Kuo, Zhubei, TW;
Cheng-Wei Lian, New Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The gate structure includes a gate dielectric layer formed over the substrate and a capping layer formed over the gate dielectric layer. The gate structure further includes a capping oxide layer formed over the capping layer and a work function metal layer formed over the capping oxide layer. The gate structure further includes a gate electrode layer formed over the work function metal layer.