The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Dec. 05, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Cheng-Wei Lian, Hsin-Chu, TW;
Chih-Lin Wang, Zhubei, TW;
Kang-Min Kuo, Zhubei, TW;
Chih-Wei Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, an interfacial layer formed over the substrate, and an insertion layer formed over the interfacial layer. The semiconductor structure further includes a gate dielectric layer formed over the insertion layer and a gate structure formed over the gate dielectric layer. The insertion layer and the gate dielectric layer may be metal oxides where the insertion layer has an oxygen coordination number greater than the gate dielectric layer.