The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Dec. 30, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Wei Lin, Taichung, TW;
Chih-Lin Wang, Zhubei, TW;
Kang-Min Kuo, Zhubei, TW;
Cheng-Wei Lian, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile