The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Mar. 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Cheng-Wei Chang, Taipei City, TW;
Chien Chang, Hsinchu, TW;
Kan-Ju Lin, Kaohsiung City, TW;
Harry Chien, Chandler, AZ (US);
Shuen-Shin Liang, Hsinchu County, TW;
Chia-Hung Chu, Taipei City, TW;
Sung-Li Wang, Hsinchu County, TW;
Shahaji B. More, Hsinchu City, TW;
Yueh-Ching Pai, Taichung City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A source/drain component is disposed over an active region and surrounded by a dielectric material. A source/drain contact is disposed over the source/drain component. The source/drain contact includes a conductive capping layer and a conductive material having a different material composition than the conductive capping layer. The conductive material has a recessed bottom surface that is in direct contact with the conductive capping layer. A source/drain via is disposed over the source/drain contact. The source/drain via and the conductive material have different material compositions. The conductive capping layer contains tungsten, the conductive material contains molybdenum, and the source/drain via contains tungsten.