The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jun. 01, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu Pei Chen, Taipei, TW;
Chia-Hao Chang, Hsinchu, TW;
Shin-Yi Yang, Taipei, TW;
Chia-Hung Chu, Taipei, TW;
Po-Chin Chang, Taichung, TW;
Shuen-Shin Liang, Hsinchu, TW;
Chun-Hung Liao, Taichung, TW;
Yuting Cheng, Taoyuan, TW;
Hung-Yi Huang, Hsinchu, TW;
Harry Chien, Chandler, AZ (US);
Pinyen Lin, Rochester, NY (US);
Sung-Li Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Provided are devices with conductive contacts and methods for forming such devices. A method includes forming a lower conductive contact in a dielectric material and over a structure, wherein the lower conductive contact has opposite sidewalls that extend to and terminate at a top surface. The method also includes separating an upper portion of each sidewall from the dielectric material and locating a barrier material between the upper portion of each sidewall and the dielectric material. Further, the method includes forming an upper conductive contact over the lower conductive contact.