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For the Inventor, By the Inventor

Taipei, Taiwan

Shin-Yi Yang

This inventor holds 105 USPTO granted patents and 54 published patent applications, primarily in Graphene Interconnects (CPC class H01L23-5226). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shin-Yi Yang. Retrieved from https://idiyas.com/inventor/shin-yi-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 105 

% Patents Active = 91.4

Average Co-Inventor Count = 4.0

ph-index = 5

Forward Citations = 180(Granted Patents)

Forward Citations (Not Self Cited) = 131(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • New Taipai, TW (2020)
  • Taipei, TW (2023)
  • New Taipei, TW (2015 - 2024)
  • Hsinchu, TW (2023 - 2024)

Company Filing History:

goldMedal105 out of 43,553 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2026

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Areas of Expertise:
Graphene Barrier Layer
Interconnect Structure
Semiconductor Packages
Hybrid Barrier Layer
Conductive Structures
Low-Resistance Interconnects
2D Conductive Structures
Integrated Circuits
Topological Materials
Protection Liners
Discontinuous Barrier Layer
Vertical Conductive Graphene
105 patents (USPTO):Explore Patents
1. 12787308 - Semiconductor device (2026-11-03),
2. 12751258 - Semiconductor structure and manufacturing method thereof (2026-09-29),
3. 12733464 - Structure having 2D material capping layer and manufacturing method thereof (2026-09-08),
4. 12721154 - Semiconductor structure having verticle conductive graphene and method for forming the same (2026-08-25),
5. 12721134 - Conductive structures of integrated circuits (2026-08-25),
6. 12713896 - INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME (2026-08-18),
7. 12690433 - Low resistance interconnect features and method for manufacturing the same (2026-07-21),
8. 12690224 - Semiconductor structure and method manufacturing the same (2026-07-21),
9. 12677646 - Semiconductor structure including cap layer of two-dimensional material and method for manufacturing the same (2026-07-07),
10. 12660593 - Interconnect structure (2026-06-16),
11. 12660586 - Via structure and methods for forming the same (2026-06-16),
12. 12660580 - Selective barrier layer deposition using blocking layers (2026-06-16),
13. 12648419 - Semiconductor structure having vertical conductive graphene and method for forming the same (2026-06-02),
14. 12616018 - Graphene barrier layer of interconnect structure (2026-04-28),
15. 12550699 - Integrated circuit interconnect structure having discontinuous barrier layer and air gap (2026-02-10),

Title: The Innovative Journey of Inventor Shin-Yi Yang

Introduction: Shin-Yi Yang, a talented inventor hailing from New Taipei, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Shin-Yi Yang's most recent patents include advancements in renewable energy technology, smart home devices, and artificial intelligence systems, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Shin-Yi Yang has established himself as a prominent figure in the tech industry, with a strong focus on sustainability and efficiency. His inventions have revolutionized various sectors, earning him recognition and accolades globally.

Collaborations: Throughout his career, Shin-Yi Yang has collaborated with leading tech companies, research institutions, and universities to further develop and implement his innovative ideas. His ability to work in diverse teams has led to the successful realization of groundbreaking projects.

Conclusion: In conclusion, Shin-Yi Yang's passion for innovation, coupled with his dedication to creating a sustainable future, has solidified his position as a visionary inventor. His relentless pursuit of technological advancement continues to inspire the next generation of inventors and shape the world we live in today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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