The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jul. 19, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Meng-Pei Lu, Hsinchu City, TW;
Tz-Jun Kuo, Hsinchu County, TW;
Shin-Yi Yang, New Taipei City, TW;
Ming-Han Lee, Taipei City, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/083 (2026.01); H10W 20/036 (2026.01); H10W 20/056 (2026.01); H10W 20/057 (2026.01); H10W 20/089 (2026.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01); H10W 20/034 (2026.01); H10W 20/037 (2026.01);
Abstract
Vias and methods of making the same. The vias including a middle portion located in a via opening in an interconnect-level dielectric layer, a top portion including a top head that extends above the via opening and extends laterally beyond upper edges of the via opening and a bottom portion including a bottom head that extends below the via opening and extends laterally beyond lower edges of the via opening. The via may be formed from a refractory material.