The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Feb. 23, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shin-Yi Yang, New Taipei Clty, TW;

Ming-Han Lee, Taipei Clty, TW;

Shau-Lin Shue, Hsinchu Clty, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/44 (2026.01); H10W 20/48 (2026.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/01 (2026.01); H10W 20/033 (2026.01); H10W 20/037 (2026.01); H10W 20/038 (2026.01); H10W 20/039 (2026.01); H10W 20/056 (2026.01); H10W 20/062 (2026.01); H10W 20/075 (2026.01); H10W 20/081 (2026.01); H10W 20/082 (2026.01); H10W 20/0886 (2026.01); H10W 20/425 (2026.01); H10W 20/435 (2026.01); H10W 20/4405 (2026.01); H10W 20/4407 (2026.01); H10W 20/4421 (2026.01); H10W 20/4424 (2026.01); H10W 20/4432 (2026.01); H10W 20/4435 (2026.01); H10W 20/4441 (2026.01); H10W 20/4446 (2026.01); H10W 20/4462 (2026.01); H10W 20/48 (2026.01); H10W 20/4403 (2026.01);
Abstract

A interconnect structure includes a lower metal, a dielectric layer, an upper metal, and a graphene layer. The dielectric layer laterally surrounds the lower metal. The upper metal is over the lower metal. The graphene layer is over a top surface of the upper metal and opposite side surfaces of the upper metal from a cross-sectional view.


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