The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Aug. 01, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tsu-Chun Kuo, Hsinchu, TW;
Shin-Yi Yang, Hsinchu, TW;
Yu-Chen Chan, Hsinchu, TW;
Shu-Wei Li, Hsinchu, TW;
Meng-Pei Lu, Hsinchu, TW;
Ming-Han Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/44 (2026.01); H10P 14/43 (2026.01); H10W 20/00 (2026.01); H10W 20/20 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/4462 (2026.01); H10P 14/43 (2026.01); H10W 20/034 (2026.01); H10W 20/036 (2026.01); H10W 20/045 (2026.01); H10W 20/056 (2026.01); H10W 20/057 (2026.01); H10W 20/081 (2026.01); H10W 20/086 (2026.01); H10W 20/20 (2026.01); H10W 20/438 (2026.01); H10W 20/074 (2026.01); H10W 20/084 (2026.01);
Abstract
A semiconductor structure includes a substrate, a dielectric layer, and a graphene conductive structure. The dielectric layer is disposed on the substrate, and has an inner lateral surface that is perpendicular to the substrate. The graphene conductive structure is formed in the dielectric layer and has at least one graphene layer extending in a direction parallel to the inner lateral surface of the dielectric layer.