The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Oct. 02, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shu-Wei Li, Hsinchu, TW;
Shin-Yi Yang, New Taipei City, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/44 (2026.01);
U.S. Cl.
CPC ...
H10W 20/033 (2026.01); H10W 20/076 (2026.01); H10W 20/425 (2026.01); H10W 20/4462 (2026.01);
Abstract
A structure including a conductive region, a dielectric region, and a capping layer is provided. The conductive region is disposed on or embedded in the dielectric region. The capping layer is disposed on the conductive region. A material of the capping layer includes a 2D material.
Li, Shu-Wei. (2026). Structure having 2d material capping layer and manufacturing method thereof (U.S. Patent No. 12733464). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12733464
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile