The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Jul. 09, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Hung Chu, Taipei, TW;
Ding-Kang Shih, New Taipei, TW;
Keng-Chu Lin, Chao-Chou, TW;
Pang-Yen Tsai, Jhu-bei, TW;
Sung-Li Wang, Zhubei, TW;
Shuen-Shin Liang, Hsinchu County, TW;
Tsungyu Hung, Hsinchu, TW;
Hsu-Kai Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a method to form a semiconductor device with backside contact structures. The method includes forming a semiconductor device on a first side of a substrate. The semiconductor device includes a source/drain (S/D) region. The method further includes etching a portion of the S/D region on a second side of the substrate to form an opening and forming an epitaxial contact structure on the S/D region in the opening. The second side is opposite to the first side. The epitaxial contact structure includes a first portion in contact with the S/D region in the opening and a second portion on the first portion. A width of the second portion is larger than the first portion.