IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11854898 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

May. 17, 2021

Wrap-around contact on finfet

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Sung-Li Wang, Zhubei, TW;

Neng-Kuo Chen, Hsinchu, TW;

Ding-Kang Shih, New Taipei, TW;

Meng-Chun Chang, Hsinchu, TW;

Yi-An Lin, Taipei, TW;

Gin-Chen Huang, New Taipei, TW;

Chen-Feng Hsu, Hsinchu, TW;

Hau-Yu Lin, Kaohsiung, TW;

Chih-Hsin Ko, Fongshan, TW;

Sey-Ping Sun, Hsinchu, TW;

Clement Hsingjen Wann, Carmel, NY (US);

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Mounir S Amer

Assistant Examiner:

Alexander undefined Belousov

Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/165 (2006.01); H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/823418 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 21/823814 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/41783 (2013.01); H01L 29/41791 (2013.01); H01L 29/42364 (2013.01); H01L 29/518 (2013.01); H01L 29/665 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7842 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.

Find Patent Forward Citations

Loading…