Gin-Chen Huang

This inventor holds 27 USPTO granted patents, primarily in FinFET Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gin-Chen Huang. Retrieved from https://idiyas.com/inventor/gin-chen-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27

% Patents Active = 70.4

Average Co-Inventor Count = 6.1

ph-index = 6

Forward Citations = 1,888(Granted Patents)

Location History:

New Taipei, TW (2014 - 2023)
Hsinchu, TW (2017 - 2023)

Company Filing History:

27 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2023

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Areas of Expertise:

FinFET

Wrap-Around Contact

Semiconductor Device

Chemical Mechanical Polishing

Defect Reduction

Self-Aligned Contact

Germanium Substrate

Temperature Control

Dual-Metal Silicide

Insulating Material Layers

Fin Structure

In-Situ Metal Gate

27 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11854898 - Wrap-around contact on FinFET (2023-12-26),

2. 11718812 - Post-CMP cleaning composition for germanium-containing substrate (2023-08-08),

3. 11694889 - Chemical mechanical polishing cleaning system with temperature control for defect reduction (2023-07-04),

4. 11362000 - Wrap-around contact on FinFET (2022-06-14),

5. 10651091 - Wrap-around contact on FinFET (2020-05-12),

6. 10333001 - Fin structure of FinFET (2019-06-25),

7. 10269935 - Semiconductor device including Fin-PET and manufacturing method thereof (2019-04-23),

8. 10269649 - Wrap-around contact on FinFET (2019-04-23),

9. 10115597 - Self-aligned dual-metal silicide and germanide formation (2018-10-30),

10. 9941367 - Wrap-around contact on FinFET (2018-04-10),

11. 9929272 - Fin structure of FinFET (2018-03-27),

12. 9882029 - Semiconductor device including Fin-FET and manufacturing method thereof (2018-01-30),

13. 9870956 - FinFETs with nitride liners and methods of forming the same (2018-01-16),

14. 9780214 - Semiconductor device including Fin- FET and manufacturing method thereof (2017-10-03),

15. 9620628 - Methods of forming contact feature (2017-04-11),

Title: The Innovative Journey of Inventor Gin-Chen Huang

Introduction: Gin-Chen Huang, a pioneering inventor hailing from New Taipei, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions and patents.

Latest Patents: Gin-Chen Huang's latest patents showcase his commitment to pushing the boundaries of technological advancement. His recent inventions focus on enhancing communication systems and improving efficiency in the manufacturing industry.

Career Highlights: With a career spanning over two decades, Gin-Chen Huang has established himself as a leading figure in the field of innovation. His work has not only revolutionized existing technologies but has also paved the way for future developments in various industries.

Collaborations: Throughout his career, Gin-Chen Huang has collaborated with top research institutions, leading companies, and brilliant minds in the field of technology. These collaborations have been instrumental in bringing his innovative ideas to life and turning them into tangible products that benefit society.

Conclusion: In conclusion, Gin-Chen Huang's relentless pursuit of innovation and his passion for creating solutions to complex problems have solidified his position as a visionary inventor. His work continues to inspire the next generation of inventors and serves as a testament to the power of creativity and perseverance in driving technological progress.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]