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For the Inventor, By the Inventor

Taipei, Taiwan

Yi-An Lin

USPTO Granted Patents = 26 

Average Co-Inventor Count = 5.2

ph-index = 4

Forward Citations = 525(Granted Patents)


Location History:

  • Taipei, TW (2014 - 2023)
  • Hsinchu, TW (2019 - 2024)
  • Taichung, TW (2020 - 2024)

Company Filing History:

goldMedal26 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

where 'Filed Patents' based on already Granted Patents

26 patents (USPTO):
1. 12431447 - Semiconductor device having a passivation layer (2025-09-30),
2. 12021002 - Warpage control of semiconductor die (2024-06-25),
3. 12002771 - Semiconductor device having a passivation layer and method of making (2024-06-04),
4. 11854898 - Wrap-around contact on FinFET (2023-12-26),
5. 11817404 - Post passivation interconnect (2023-11-14),
6. 11450584 - Warpage control of semiconductor die (2022-09-20),
7. 11362000 - Wrap-around contact on FinFET (2022-06-14),
8. 11114395 - Post passivation interconnect (2021-09-07),
9. 11018100 - Semiconductor device having a passivation layer (2021-05-25),
10. 10797156 - Method of forming the gate electrode of field effect transistor (2020-10-06),
11. 10755995 - Warpage control of semiconductor die (2020-08-25),
12. 10651091 - Wrap-around contact on FinFET (2020-05-12),
13. 10516031 - Method of forming the gate electrode of field effect transistor (2019-12-24),
14. 10453811 - Post passivation interconnect and fabrication method therefor (2019-10-22),
15. 10391608 - Backside polisher with dry frontside design and method using the same (2019-08-27),

Title: Yi-An Lin: Innovating the Future of Semiconductor Technology

Introduction: Yi-An Lin is a prolific inventor based in Taipei, Taiwan, known for his significant contributions to semiconductor technology. With an impressive portfolio of 25 patents, Lin is making strides in the evolution of semiconductor devices, focusing on enhancing their performance and reliability.

Latest Patents: Among his latest innovations, Lin has developed a groundbreaking patent for warpage control in semiconductor die. This innovative design comprises a semiconductor substrate, a dielectric layer, and a metal structure, all strategically organized to maintain integrity and functionality. The first oxide-based passivation layer and a subsequent second oxide-based passivation layer ensure resilience, with differing hardness levels enhancing the device's durability. Another notable invention is a semiconductor device featuring an effective passivation layer and a unique method of manufacture. This device consists of a conductive pad and a dielectric layer, each with a specific conformity designed to optimize the performance of active devices within the semiconductor structure.

Career Highlights: Yi-An Lin is currently affiliated with Taiwan Semiconductor Manufacturing Company Ltd., where he continues to push the boundaries of what's possible in semiconductor innovation. His career at TSMC has been marked by collaboration and a focus on advancing semiconductor technology, positioning the company as a leading force in the industry.

Collaborations: Lin works alongside notable colleagues, including Neng-Kuo Chen and Sey-Ping Sun. Together, they contribute to transformative projects that drive the semiconductor sector forward, sharing expertise and insights that lead to groundbreaking inventions.

Conclusion: As an accomplished inventor, Yi-An Lin exemplifies the spirit of innovation in the semiconductor industry. His patents not only reflect his technical skill but also his commitment to advancing technology that benefits various applications. Through his work at Taiwan Semiconductor Manufacturing Company Ltd. and collaborations with esteemed colleagues, Lin continues to shape the future of semiconductor devices.

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