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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Hau-Yu Lin

USPTO Granted Patents = 12

Average Co-Inventor Count = 7.6

ph-index = 4

Forward Citations = 501(Granted Patents)


Company Filing History:

goldMedal12 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2024

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12 patents (USPTO):
1. 11908749 - Method of metal gate formation and structures formed by the same (2024-02-20),
2. 11854898 - Wrap-around contact on FinFET (2023-12-26),
3. 11508627 - Method of metal gate formation and structures formed by the same (2022-11-22),
4. 11362000 - Wrap-around contact on FinFET (2022-06-14),
5. 10978451 - Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same (2021-04-13),
6. 10804163 - Method of metal gate formation and structures formed by the same (2020-10-13),
7. 10651091 - Wrap-around contact on FinFET (2020-05-12),
8. 10510754 - Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same (2019-12-17),
9. 10304826 - Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same (2019-05-28),
10. 10269649 - Wrap-around contact on FinFET (2019-04-23),
11. 9941367 - Wrap-around contact on FinFET (2018-04-10),
12. 9443769 - Wrap-around contact (2016-09-13),

Title: The Innovative Contributions of Hau-Yu Lin

Introduction

Hau-Yu Lin is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on advanced methods and structures that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a method of metal gate formation and structures formed by the same. This method involves several steps, including providing a first gate electrode over a substrate, forming a first pair of spacers on either side of the gate electrode, and depositing a dielectric layer in the trench created after removing the gate electrode. Another notable patent is for a wrap-around contact on FinFET, which describes a fin structure on a substrate that includes an epitaxial region with a contact structure designed to improve electrical performance.

Career Highlights

Hau-Yu Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has contributed to the advancement of semiconductor technologies, making him a valuable asset to his company and the industry as a whole.

Collaborations

He has collaborated with notable coworkers such as Clement Hsingjen Wann and Chih-Hsin Ko, further enhancing the innovative environment in which he works.

Conclusion

Hau-Yu Lin's contributions to semiconductor technology through his patents and collaborations highlight his role as a key inventor in the field. His work continues to influence advancements in semiconductor manufacturing and design.

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