The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Oct. 09, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yi-Jing Lee, Hsinchu, TW;
Ya-Yun Cheng, Taichung, TW;
Hau-Yu Lin, Kaohsiung, TW;
I-Sheng Chen, Taipei, TW;
Chia-Ming Hsu, Hualien County, TW;
Chih-Hsin Ko, Kaohsiung County, TW;
Clement Hsingjen Wann, Carmel, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method includes: providing a substrate; forming a first pair of source/drain regions in the substrate; disposing an interlayer dielectric layer over the substrate, the interlayer dielectric layer having a first trench between the first pair of source/drain regions; depositing a dielectric layer in the first trench; depositing a barrier layer over the dielectric layer; performing an operation on the substrate; removing the barrier layer from the first trench to expose the dielectric layer subsequent to the operation; and depositing a work function layer over the dielectric layer in the first trench.