The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Dec. 11, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Chih-Hsin Ko, Fongshan, TW;
Cheng-Hsien Wu, Hsinchu, TW;
Ding-Kang Shih, New Taipei, TW;
Hau-Yu Lin, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
An embodiment complimentary metal-oxide-semiconductor (CMOS) device and an embodiment method of forming the same are provided. The embodiment CMOS device includes an n-type metal-oxide-semiconductor (NMOS) having a titanium-containing layer interposed between a first metal contact and an NMOS source and a second metal contact and an NMOS drain and a p-type metal-oxide-semiconductor (PMOS) having a PMOS source and a PMOS drain, the PMOS source having a first titanium-containing region facing a third metal contact, the PMOS drain including a second titanium-containing region facing a fourth metal contact.