The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Apr. 01, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yi-Jing Lee, Hsinchu, TW;
Ya-Yun Cheng, Taichung, TW;
Hau-Yu Lin, Kaohsiung, TW;
I-Sheng Chen, Taipei, TW;
Chia-Ming Hsu, Hualien County, TW;
Chih-Hsin Ko, Kaohsiung County, TW;
Clement Hsingjen Wann, Carmel, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure includes: providing a substrate; forming a first pair of source/drain regions in the substrate; disposing an interlayer dielectric layer over the substrate, the interlayer dielectric layer having a first trench between the first pair of source/drain regions; depositing a dielectric layer in the first trench; depositing a barrier layer over the dielectric layer; removing the barrier layer from the first trench to expose the dielectric layer; depositing a work function layer over the dielectric layer in the first trench; and depositing a conductive layer over the work function layer in the first trench.