The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Apr. 21, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Sung-Li Wang, Zhubei, TW;

Neng-Kuo Chen, Hsin-Chu, TW;

Ding-Kang Shih, New Taipei, TW;

Meng-Chun Chang, Taipei, TW;

Yi-An Lin, Taipei, TW;

Gin-Chen Huang, New Taipei, TW;

Chen-Feng Hsu, Hsin-Chu, TW;

Hau-Yu Lin, Kaohsiung, TW;

Chih-Hsin Ko, Fongshan, TW;

Sey-Ping Sun, Hsin-Chu, TW;

Clement Hsingjen Wann, Carmel, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract

Fin structures are formed on a substrate. An isolation region is between the fin structures. The fin structures comprise epitaxial regions extending above the isolation region. Each of the epitaxial regions has a widest mid-region between an upper-surface and an under-surface. A dual-layer etch stop is formed over the fin structures and comprises a first sub-layer and a second sub-layer. The first sub-layer is along the upper- and under-surfaces and the isolation region. The second sub-layer is over the first sub-layer and along the upper-surfaces, and the second sub-layer merges together proximate the widest mid-regions of the epitaxial regions. Portions of the dual-layer etch stop are removed from the upper- and under-surfaces. A dielectric layer is formed on the upper- and under-surfaces. A metal layer is formed on the dielectric layer on the upper-surfaces. A barrier layer is formed on the metal layer and along the under-surfaces.


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