The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jan. 16, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/165 (2006.01); H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/823418 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 21/823814 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/41783 (2013.01); H01L 29/41791 (2013.01); H01L 29/518 (2013.01); H01L 29/665 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7842 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01); H01L 29/42364 (2013.01); H01L 2029/7858 (2013.01);
Abstract
Semiconductor devices, fin field effect transistor (FinFET) devices, and methods of manufacturing semiconductor devices are disclosed. In some embodiments, a semiconductor device includes a substrate comprising a first fin and a second fin. A first epitaxial fin is disposed over the first fin, and a second epitaxial fin is disposed over the second fin. The second fin is proximate the first fin. The first epitaxial fin and the second epitaxial fin have an upper portion with a substantially pillar shape.