The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
May. 11, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Yip Loh, Hsinchu, TW;
Hong-Mao Lee, Hsinchu, TW;
Harry Chien, Hsinchu, TW;
PO-Chin Chang, Hsinchu, TW;
Sung-Li Wang, Hsinchu, TW;
Jhih-Rong Huang, Hsinchu, TW;
Tzer-Min Shen, Hsinchu, TW;
Chih-Wei Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure and methods of forming the same are described. In some embodiments, the structure includes an N-type source/drain epitaxial feature disposed over a substrate, a P-type source/drain epitaxial feature disposed over the substrate, a first silicide layer disposed directly on the N-type source/drain epitaxial feature, and a second silicide layer disposed directly on the P-type source/drain epitaxial feature. The first and second silicide layers include a first metal, and the second silicide layer is substantially thicker than the first silicide layer. The structure further includes a third silicide layer disposed directly on the first silicide layer and a fourth silicide layer disposed directly on the second silicide layer. The third and fourth silicide layer include a second metal different from the first metal, and the third silicide layer is substantially thicker than the fourth silicide layer.