The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jul. 18, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Huan-Chieh Su, Tianzhong Township, TW;
Cheng-Chi Chuang, New Taipei City, TW;
Chih-Hao Wang, Baoshan Township, TW;
Chun-Yuan Chen, Hsinchu, TW;
Sheng-Tsung Wang, Hsinchu, TW;
Meng-Huan Jao, Taichung City, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a fin protruding from a substrate; forming a gate structure extending over the fin; forming a source/drain region in the fin adjacent the gate structure; forming a first isolation region over the source/drain region; forming a first mask layer over the gate structure; etching the first isolation region using the first mask layer as an etch mask to form a first recess; conformally depositing a second mask layer over the first mask layer and within the first recess; depositing a third mask layer over the second mask layer; etching the third mask layer, the second mask layer, and the first isolation region to form a second recess that exposes the source/drain region; and depositing a conductive material in the second recess.