The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Jul. 26, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Sheng-Tsung Wang, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first epitaxial source/drain (S/D) feature disposed over a first semiconductor fin, a second epitaxial S/D feature disposed over a second semiconductor fin and adjacent to the first epitaxial S/D feature, an interlayer dielectric (ILD) layer disposed over the first and the second epitaxial S/D features, and a conductive feature disposed in the ILD layer and electrically coupled to the first epitaxial S/D feature and the second epitaxial S/D feature. The conductive feature includes first portions having bottom surfaces contacting the first and the second epitaxial S/D features, and a second portion having a bottom surface contacting the ILD layer. The bottom surface of the second portion is above the bottom surface of the first portions.