The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
May. 05, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Chi Chuang, New Taipei, TW;
Huan-Chieh Su, Changhua County, TW;
Sheng-Tsung Wang, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/32135 (2013.01); H01L 21/76846 (2013.01); H01L 21/76847 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 23/53223 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01);
Abstract
Semiconductor structures and methods of forming the same are provided. In one embodiment, a semiconductor structure includes an active region over a substrate, a gate structure disposed over the active region, and a gate contact that includes a lower portion disposed over the gate structure and an upper portion disposed over the lower portion.