The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
May. 01, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Lin Chuang, Taoyuan, TW;
Chia-Hao Chang, Hsinchu, TW;
Sheng-Tsung Wang, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Tien-Lu Lin, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Chih-Hao Wang, Baoshan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.