The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Sep. 09, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Sheng-Tsung Wang, Hsinchu, TW;
Huan-Chieh Su, Hsinchu, TW;
Chun-Yuan Chen, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Ching-Wei Tsai, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); H01L 21/762 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/76232 (2013.01); H10D 84/0151 (2025.01); H10D 86/00 (2025.01);
Abstract
An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor. The first and second nanostructure each include gate electrodes. A backside trench separates the first gate electrode from the second gate electrode. A bulk dielectric material fills the backside trench. A gate cap metal electrically connects the first gate electrode to the second gate electrode.