Semiconductor device and method of manufacturing thereof

Abstract

A semiconductor device and a method of manufacturing thereof are provided. The semiconductor device comprises a gate stack, source/drain regions, and a source/drain contact via. The gate stack is disposed on a substrate. The source/drain regions are disposed on the substrate and located at opposite sides of the gate stack. The source/drain contact via penetrates through the substrate and is electrically connected to a first source/drain region among the source/drain regions. The source/drain contact vias comprise a first conductor and a second conductor disposed on the first conductor. The first conductor comprises a silicide layer and a first metallic portion. The second conductor comprises a glue layer and a second metallic portion. The first metallic portion is spaced apart from the second metallic portion by the glue layer.