The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Jan. 28, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Lin-Yu Huang, Hsinchu, TW;

Li-Zhen Yu, New Taipei, TW;

Chia-Hao Chang, Hsinchu, TW;

Cheng-Chi Chuang, New Taipei, TW;

Kuan-Lun Cheng, Hsin-Chu, TW;

Chih-Hao Wang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 30/0245 (2025.01); H10D 30/62 (2025.01); H10D 30/6219 (2025.01); H10D 64/513 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01);
Abstract

Structures and methods that include a device such as a gate-all-around transistor formed on a frontside and a contact to one terminal of the device from the frontside of the structure and one terminal of the device from the backside of the structure. The backside contact may include selectively etching from the backside a first trench extending to expose a first source/drain structure and a second trench extending to a second source/drain structure. A conductive layer is deposited in the trenches and patterned to form a conductive via to the first source/drain structure.


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