The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Aug. 25, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Anindya Nath, Essex Junction, VT (US);

Ephrem G. Gebreselasie, South Burlington, VT (US);

Rajendran Krishnasamy, Essex Junction, VT (US);

Alain F. Loiseau, Williston, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 20/20 (2023.01); H01L 23/525 (2006.01); H10D 10/60 (2025.01);
U.S. Cl.
CPC ...
H10B 20/20 (2023.02); H01L 23/5256 (2013.01); H10D 10/60 (2025.01);
Abstract

Embodiments of the disclosure provide a circuit structure including an electrically programmable fuse (efuse) and lateral bipolar transistor. A structure of the disclosure includes a lateral bipolar transistor within a semiconductor layer and over a substrate. An insulator layer is over a portion of the semiconductor layer. An efuse structure is within a polycrystalline semiconductor layer and over the insulator layer. The efuse structure is over a current path through the lateral bipolar transistor.


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