The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Sep. 07, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Robert J. Gauthier, Jr., Williston, VT (US);
Meng Miao, Williston, VT (US);
Alain F. Loiseau, Williston, VT (US);
Souvick Mitra, Essex Junction, VT (US);
You Li, South Burlington, VT (US);
Wei Liang, South Burlington, VT (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/8222 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01L 21/8222 (2013.01); H01L 21/84 (2013.01); H01L 27/0288 (2013.01); H01L 27/1207 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.