The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jun. 24, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Robert J. Gauthier, Jr., Williston, VT (US);
Alain F. Loiseau, Williston, VT (US);
Souvick Mitra, Essex Jucntion, VT (US);
Tsung-Che Tsai, New York, NY (US);
Meng Miao, Williston, VT (US);
You Li, South Burlington, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Embodiments of the disclosure provide an integrated circuit (IC) structure, including a triple well structure within a semiconductor substrate. A base region is within a doped well of the triple well structure, a collector terminal is within the doped well and laterally separated from the base region by a first insulator and a first avalanche junction is defined between a first pair of oppositely-doped semiconductor regions within the collector terminal. An emitter terminal is within the third doped well of the triple well structure and laterally separated from the collector terminal by a second insulator. A second avalanche junction is defined between a second pair of oppositely-doped semiconductor regions of the emitter terminal.