The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Oct. 13, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Anindya Nath, Essex Junction, VT (US);
Zhiqing Li, Halfmoon, NY (US);
Souvick Mitra, Essex Junction, VT (US);
Alain Loiseau, Williston, VT (US);
Wei Liang, South Burlington, VT (US);
Assignee:
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 27/0248 (2013.01); H01L 27/0262 (2013.01); H01L 27/0266 (2013.01);
Abstract
Embodiments of the disclosure provide an electrostatic discharge (ESD) device, including: an input pad; an underlapped field effect transistor (UL-FET) with a trigger voltage Vt, including: an underlapped drain region coupled to the input pad; a source region coupled to ground; and a gate structure coupled to the input pad; and a blocking layer separating the underlapped drain region from the gate structure of the UL-FET by an underlap distance.