The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jun. 03, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Anindya Nath, Essex Junction, VT (US);

Alain Loiseau, Williston, VT (US);

Rajendran Krishnasamy, Essex Junction, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 30/603 (2025.01); H10D 30/0221 (2025.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01);
Abstract

Device structures with an isolation well and methods of forming a device structure with an isolation well. The structure comprises a first well of a first conductivity type in a semiconductor substrate, and a second well of a second conductivity type in the semiconductor substrate. The second conductivity type is opposite to the first conductivity type. The first well includes a plurality of segments, and the second well is positioned in a vertical direction between the segments of the first well and a top surface of the semiconductor substrate.


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