The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Oct. 26, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Mickey Yu, Essex Junction, VT (US);

Alain Loiseau, Williston, VT (US);

Souvick Mitra, Essex Junction, VT (US);

Tsung-Che Tsai, Essex Junction, VT (US);

You Li, South Burlington, VT (US);

Robert J. Gauthier, Jr., South Burlington, VT (US);

Assignee:

GLOBAL FOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01);
Abstract

Diode structures and methods of fabricating diode structures. First and second gate structures are formed with the second gate structure arranged parallel to the first gate structure. First and second fins are formed that extend vertically from a top surface of a substrate. The first and second fins are arranged between the first gate structure and the second gate structure. A contact structure is coupled with the first fin and the second fin. The contact structure is laterally arranged between the first gate structure and the second gate structure.


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