The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Dec. 15, 2015
International Business Machines Corporation, Armonk, NY (US);
Emre Alptekin, Fishkill, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Sivananda Kanakasabapathy, Niskayuna, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Mickey H. Yu, Essex Junction, VT (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method for forming a semiconductor device comprises forming a first fin and a second fin on a semiconductor substrate, forming a sacrificial gate stack over a channel region of the first fin and the second fin, depositing a layer of spacer material over the first fin and the second fin, depositing a layer of dielectric material over the layer of spacer material, removing a portion of the dielectric material to form a first cavity that exposes a portion of the first fin, epitaxially growing a first semiconductor material on the exposed portion of the first fin to form a source/drain region on the first fin, depositing a protective layer on the source/drain region on the first fin, removing a portion of the dielectric material to form a second cavity that exposes a portion of the second fin, and epitaxially growing a source/drain region on the second fin.